Circuit board and method for manufacturing the same and semiconductor device and method for manufacturing the same

ABSTRACT

A circuit board includes a film substrate, a plurality of wiring layers arranged in order on the film substrate, and bumps formed on the wiring layers, respectively. Each of the bumps is provided across a longitudinal direction of a corresponding one of the wiring layers so as to extend over regions on both sides of the wiring layer above the insulating substrate, and a cross sectional shape of the bump taken in the width direction of the wiring layer is such that a central portion is higher than portions on both sides of the central portion. Accordingly, the bumps formed on the wiring layers can be held with strength sufficient for practical use against the force applied in the lateral direction.

This application is a continuation of U.S. Ser. No. 10/833,972, filedApr. 27, 2004, which application is incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates generally to a circuit board such as atape carrier substrate used in a chip-on-film (COF) package module. Inparticular, the present invention relates to a configuration of bumpsformed on wiring layers on the circuit board and a method formanufacturing the circuit board.

BACKGROUND OF THE INVENTION

As one type of package module using a film substrate, the one employinga COF structure has been known. FIG. 14 is a cross-sectional viewshowing a part of one example of a package module with a COF structure.The COF package module includes a semiconductor chip 21 mounted on aninsulating flexible tape carrier substrate 20 and is protected by anencapsulation resin 22. Such a COF package module mainly is used as adriver for operating a flat panel display. The tape carrier substrate 20includes as main components an insulating film substrate 23 and wiringlayers 24 formed on a surface of the film substrate 23. A metal coating25 formed by plating and a layer of a solder resist 26 as an insulatingresin are formed on the wiring layers 24, if necessary. In general,polyimide is used as a material of the film substrate 23 and copper isused as a material of the wiring layers 24.

The wiring layers 24 formed on the tape carrier substrate 20 andelectrode pads 27 formed on the semiconductor chip 21 are connected toeach other via bumps 28. The bumps 28 are provided either by previouslyforming them on the wiring layers 24 on the tape carrier substrate 20 orby previously forming them on the electrode pads 27 on the semiconductorchip 21.

When forming the bumps 28 on the wiring layers 24 on the tape carriersubstrate 20, a method as disclosed in JP 2001-168129A is used, forexample. Major aspects of this method will be described with referenceto FIGS. 15A1 to 15F1 and FIGS. 15A2 to 15F2. FIGS. 15A1 to 15F1 areplan views showing a part of the film substrate in a series of processesin the conventional method. FIGS. 15A2 to 15F2 are cross-sectional viewsof FIGS. 15A1 to 15F1, respectively. Each of the cross-sectional viewsis taken along the line C-C in FIG. 15A1. These processes are directedto an example where the bumps are formed by metal plating.

First, on the film substrate 23 on which the wiring layers 24 are formedas shown in FIG. 15A1, a photoresist 29 is formed so as to cover theentire surface of the film substrate 23 as shown in FIG. 15B1. Next, asshown in FIG. 15C1, using an exposure mask 30 for forming the bumps, thephotoresist 29 is exposed to light through light-transmitting regions 30a of the exposure mask 30. Subsequently, as shown in FIG. 15D1, thephotoresist 29 is developed to form opening patterns 29 a. Thereafter,as shown in FIG. 15E1, a metal is plated on the wiring layers 24 throughthese opening patterns 29 a. By removing the photoresist 29, the tapecarrier substrate 20 provided with the wiring layers 24 on which thebumps 28 are formed is obtained as shown in FIG. 15F1. In general, thebumps 28 are arranged along four sides of the rectangular film substrate23 as shown in FIG. 15F1. However, instead of a single row arrangementalong each side of the film substrate 23 as shown in FIG. 15F1, thebumps 28 may be arranged in a plurality of rows along each side of thefilm substrate 23.

When forming the bumps 28 on the wiring layers 24 formed on the tapecarrier substrate 20 in the above-described manner, accurate positioningof the exposure mask 30 is difficult owing to the characteristics of thefilm substrate 23. If the exposure mask 30 is not placed in properposition, favorable bumps 28 cannot be formed. On this account, thebumps 28 generally are formed on the electrode pads 27 on thesemiconductor chip 21. On the other hand, forming the bumps 28 on thewiring layers 24 on the tape carrier substrate 20 is advantageous inthat it requires a smaller number of processes than forming the bumps 28on the electrode pads 27 on the semiconductor chip 21 and thus canreduce manufacturing cost.

However, the bumps 28 formed by the above-described conventional methodhave a problem in that the shape thereof is not favorable. FIGS. 16A and16B are cross-sectional views of the tape carrier substrate obtainedthrough the processes described above. FIG. 16A is a cross-sectionalview taken in the longitudinal direction of the wiring layers 24, whichis the same cross-sectional view as FIG. 15F2. On the other hand, FIG.16B is a cross-sectional view taken along the line D-D in FIG. 16A,i.e., taken in the transverse direction of the wiring layers 24.

As shown in FIGS. 16A and 16B, each of the bumps 28 is formed to bejoined to an upper surface of the corresponding wiring layer 24. Thus,the bump 28 is held on the wiring layer 24 only by joining a portionwith an extremely small area to the upper surface of the wiring layer24. Accordingly, when the bump 28 receives a force in the lateraldirection, it is liable to come off from the upper surface of the wiringlayer 24. For example, when a force .in the lateral direction is appliedbetween the semiconductor chip 21 and the tape carrier substrate 20 whenthe bumps 28 are joined to the electrode pads 27 (see FIG. 14) on thesemiconductor chip 21, there is a risk that the bumps 28 might come offfrom the wiring layers 24, which renders the connection after thesemiconductor chip is mounted unstable.

Furthermore, the bumps 28 have flat upper surfaces because they areformed only on the upper surfaces of the wiring layers 24 by carryingout. plating through the minute opening patterns 29 a shown in FIG.15D1. The flat upper surfaces of the bumps 28 may bring about thefollowing problems when connecting the bumps 28 to the electrode pads 27on the semiconductor chip 21.

First, if there is a displacement in positioning between the bumps 28and the electrode pads 27, each of the bumps 28 with the flat uppersurfaces is prone to be in contact with the electrode pad 27 that isadjacent to the electrode pad 27 to which the bump 28 actually is to beconnected. This brings about the risk that the bumps 28 might beconnected to incorrect electrode pads 27.

Second, when connecting the bumps 28 to the electrode pads 27, it isdifficult to break natural oxide films formed on the surfaces of theelectrode pads 27. Usually, the oxide films formed on the electrode pads27 are broken by the contact of the bumps 28 against the electrode pads27 so that the bumps 28 are electrically connected to metal portions ofthe electrode pads 27 that are not oxidized. However, with the flatupper surfaces of the bumps 28, it is difficult to break the oxidefilms.

Thirdly, it is difficult to connect the bumps 28 to the electrode pads27 in the state where the resin layer 22 intervenes between thesemiconductor chip 21 and the tape carrier substrate 20 as shown in FIG.17. When mounting the semiconductor chip 21 on the tape carriersubstrate 20, the bumps 28 are brought into contact with the respectiveelectrode pads 27 by displacing the resin layer 22 with their heads.However, the bumps 28 with the flat upper surfaces cannot displace theresin layer 22 sufficiently.

Moreover, when forming the bumps 28 by the conventional methodillustrated in FIGS. 15A1 to 15F1 and FIGS. 15A2 to 15F2, if thepositioning accuracy of the exposure mask 30 for forming the bumpsrelative to the wiring layers 24 is not sufficient, an area of theportions where the opening patterns 29 a overlap with the respectivewiring layers 24 becomes smaller. As a result, as shown in FIG. 18, thebumps 28 formed on the respective wiring layers 24 cannot attain thedesigned size. The problem of such defect in size of the bumps 28 willbecome more serious as the pitch of the electrode pads 27 becomesnarrower in accordance with the demand for higher output power from COFpackage modules.

Although the above-describe problems are particularly noticeable whenusing tape carrier substrates, these problems are common to similarkinds of circuit boards.

SUMMARY OF THE INVENTION

Therefore, with the foregoing in mind, it is an object of the presentinvention to provide a circuit board that allows bumps formed onrespective wiring layers to be held with strength sufficient forpractical use against the force applied in the lateral direction,thereby achieving sufficient connection stability after a semiconductorchip is mounted thereon.

Furthermore, it is another object of the present invention to provide acircuit board that is provided with bumps having a shape suitable forconnection with electrode pads of a semiconductor chip.

Furthermore, it is still another object of the present invention toprovide a method for manufacturing a circuit board, capable of allowingthe above-described favorable bumps to be formed easily and alsoallowing the bumps having a sufficient area to be formed reliably on therespective wiring layers even when the positioning accuracy of anopening pattern formed on a photoresist relative to the wiring layers islow.

A circuit board according to the present invention includes: aninsulating substrate; a plurality of wiring layers arranged on theinsulating substrate; and bumps formed on the wiring layers,respectively. The bump is provided across a longitudinal direction of acorresponding one of the wiring layers so as to extend over regions onboth sides of the wiring layer above the insulating substrate, and across sectional shape of the bump taken in a width direction of thewiring layer is such that a central portion is higher than portions onboth sides of the central portion.

Furthermore, a circuit board according to another aspect of the presentinvention includes: an insulating substrate; a plurality of wiringlayers arranged on the insulating substrate; and bumps formed on thewiring layers, respectively, wherein the bump is provided across alongitudinal direction of a corresponding one of the wiring layers so asto extend over regions on both sides of the wiring layer above theinsulating substrate, and an upper surface of the bump is flat.

Furthermore, the present invention provides a method for manufacturing acircuit board, including: arranging a plurality of wiring layers on aninsulating substrate; forming a photoresist on a surface of theinsulating substrate on which the plurality of wiring layers areprovided; forming an opening on the photoresist so that each of thewiring layers is partially exposed in the opening, the opening beingprovided across the wiring layers so as to extend over regions on bothsides of the wiring layers; and plating a metal on the exposed portionsof the wiring layers through the opening of the photoresist, therebyforming bumps on the wiring layers, respectively.

These and other advantages of the present invention will become apparentto those skilled in the art upon reading and understanding the followingdetailed description with reference to the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a part of a tape carrier substrateaccording to Embodiment 1.

FIG. 2A is a plan view showing another part of the tape carriersubstrate shown in FIG. 1, FIG. 2B is a cross-sectional front view ofthe same, and FIG. 2C is a cross-sectional view taken along the line A-Ain FIG. 2B.

FIGS. 3A1 to 3F1 are plan views showing a part of a film substrate in aseries of major processes in a method of manufacturing a tape carriersubstrate according to Embodiment 2, and FIGS. 3A2 to 3F2 are enlargedcross-sectional views of FIGS. 3A1 to 3F1, respectively.

FIG. 4 is a plan view showing an example of a semiconductor chip.

FIG. 5 is a plan view showing a film substrate on which wiring layersare formed, which is used for manufacturing a tape carrier substrate.

FIG. 6 is a plan view showing a region for mounting a semiconductor chipin one example of a tape carrier substrate manufactured by the methodaccording to Embodiment 2.

FIG. 7 is a plan view showing a region for mounting a semiconductor chipin another example of a tape carrier substrate manufactured by themethod according to Embodiment 2.

FIG. 8 is a plan view showing one example of an exposure mask accordingto Embodiment 2.

FIG. 9 is a plan view showing a tape carrier substrate on which wiringlayers according to a modified example of Embodiment 2 are formed.

FIG. 10A is a plan view illustrating an exposing process using anexposure mask according to another example of Embodiment 2, and FIG. 10Bis an enlarged cross-sectional view of the same.

FIG. 11 is a plan view showing a tape carrier substrate according toEmbodiment 3.

FIG. 12 is a cross-sectional view showing a semiconductor deviceaccording to Embodiment 4.

FIGS. 13A and 13B are cross-sectional views illustrating another exampleof a method for manufacturing a semiconductor device, according toEmbodiment 4.

FIG. 14 is a cross-sectional view showing a part of a conventional COFpackage module.

FIGS. 15A1 to 15F1 are plan views showing a part of a film substrate ina series of major processes in a conventional method of manufacturing atape carrier substrate, and FIGS. 15A2 to 15F2 are cross-sectional viewsof FIGS. 15A1 to 15F1, respectively.

FIGS. 16A and 16B are cross-sectional views showing a part of a tapecarrier substrate manufactured by the processes shown in FIGS. 15A1 to15F1 and FIGS. 15A2 to 15F2.

FIG. 17 is a cross-sectional view showing the state where asemiconductor chip is mounted on the tape carrier substrate shown inFIGS. 16A and 16B.

FIG. 18 is a plan view showing a part of a tape carrier substrate toexplain a problem in the processes illustrated in FIGS. 15A1 to 15F1 andFIGS. 15A2 to 15F2.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the circuit board according to the present invention, the bump isprovided across a longitudinal direction of a corresponding one of thewiring layers so as to extend over regions on both sides of the wiringlayer above the insulating substrate. With this configuration, each ofthe bumps is joined not only to the upper surface but also to both theside surfaces of the corresponding wiring layer, which allows the bumpto exhibit sufficient stability against the force applied in the lateraldirection.

Preferably, the bump is in contact with a surface of the insulatingsubstrate on both the sides of the wiring layer. Still further, it ispreferable that a cross sectional shape of the bump taken in alongitudinal direction of the wiring layer is substantially rectangular.Still further, it is preferable that the wiring layers and the bumps areplated with a metal that is different from materials of the wiringlayers and the bumps. Still further, it is preferable that the bumpextends across the wiring layer in a direction perpendicular to thelongitudinal direction of the wiring layer. Still further, it ispreferable that each of the wiring layers has a region narrower than aremaining region at a leading end portion, and the bump is formed in thenarrower region.

In the method for manufacturing a circuit board according to the presentinvention, a photoresist is formed on an entire surface of an insulatingsubstrate on which a plurality of wiring layers are arranged, and then,an opening is formed on the photoresist so as to be a slit-shapedpattern that is provided across the wiring layers so that the regions onboth sides of the wiring layers are exposed in the opening. A metal isplated on portions of the wiring layers exposed in the slit-shapedpattern to form bumps on the respective wiring layers.

According to this method, the above-described favorable bumps can beformed easily, and besides, the bumps having a sufficient area can beformed reliably on the respective wiring layers even when thepositioning accuracy of the opening pattern formed on the photoresistrelative to the wiring layers is low.

In the above-described method of the present invention, the opening maybe formed so as to extend across the plurality of wiring layers.Furthermore, in the step of forming the opening on the photoresist, thephotoresist is exposed to light using either an exposure mask having alight-transmitting region including a portion that extends in adirection along which the plurality of wiring layers are arranged or anexposure mask having a light-shielding region including a portion thatextends in a direction along which the plurality of wiring layers arearranged. Furthermore, it is preferable that a longitudinal direction ofthe light-transmitting region of the exposure mask or thelight-shielding region of the exposure mask is orthogonal to alongitudinal direction of the wiring layers. Preferably, the plating iselectroplating.

In the above-described method of the present invention, it is preferablethat the wiring layers arranged along a shorter side direction of asemiconductor-chip mounting portion are wider than the wiring layersarranged along a longer side direction of the semiconductor-chipmounting portion, and the opening formed on the photoresist is formed soas to have a continuous shape in a portion along a longer side of thesemiconductor-chip mounting portion and a discrete shape includingseparate openings in a portion along a shorter side of thesemiconductor-chip mounting portion. With this configuration, thepositional relationship between the bumps formed on the wiring layersarranged along the shorter side direction of the semiconductor-chipmounting portion and the bumps formed on the wiring layers arrangedalong the longer side direction of the semiconductor-chip mountingportion can be kept constant even when the positioning accuracy of theexposure mask is low.

Furthermore, it is preferable that each of the wiring layers has aregion narrower than a remaining region at a leading end portion, andthe bump is formed in the narrower region.

It is possible to provide a semiconductor device including a circuitboard having any one of the above-mentioned configurations and asemiconductor chip mounted on the circuit board, wherein electrode padsof the semiconductor chip are connected to the wiring layers via thebumps, respectively. Each of the electrode pads of the semiconductorchip may be configured so that an insulating film formed on a surface ofthe semiconductor chip is located at a perforated bottom of theelectrode pad.

A semiconductor device can be manufactured by: mounting a semiconductorchip on a circuit board having any one of the above-mentionedconfigurations; and connecting electrode pads of the semiconductor chipto the bumps, thereby achieving connection between the electrode pads ofthe semiconductor chip and the wiring layers via the bumps. In thiscase, it is preferable that, when connecting the bump to the electrodepad, an oxide film formed on the electrode pad of the semiconductor chipis broken with the bump, thereby achieving electrical connection betweenthe bump and an inner portion of the electrode pad that is not oxidized.Furthermore, it is preferable that a region of the wiring layers onwhich the bumps are formed is provided with an encapsulation resin, andthereafter, the semiconductor chip is mounted on the circuit board andthe electrode pads of the semiconductor chip are connected to the bumps.Furthermore, when the electrode pads of the semiconductor chip areconnected to the bumps, ultrasonic energy preferably is applied toportions where the electrode pads are in contact with the bumps whilepressing the electrode pads and the bumps against each other.

Hereinafter, embodiments of the present invention will be describedspecifically with reference to the accompanying drawings. While theembodiments described below are directed to examples where a tapecarrier substrate is used, the technical idea of each embodiment also isapplicable when other circuit boards are used.

EMBODIMENT 1

The configuration of a tape carrier substrate according to Embodiment 1of the present invention will be described with reference to FIG. 1 andFIGS. 2A to 2C. FIG. 1 is a perspective view showing a part of the tapecarrier substrate. FIG. 2A is a plan view showing a part of the tapecarrier, FIG. 2B is a cross-sectional front view of the same, and FIG.2C is a cross-sectional view taken along the line A-A in FIG. 2B.

As shown in FIG. 1, a plurality of wiring layers 2 are arranged in orderon a film substrate 1, and a bump is formed on each wiring layer 2. Asshown in FIG. 2A, the planer shape of the bump 3 is such that the bump 3extends across the wiring layer 2 over regions on both sides of thewiring layer 2. On the other hand, the cross sectional shape of the bump3 taken in the width direction of the wiring layer 2 is such that thebump 3 is joined to an upper surface and both side surfaces of thewiring layer 2 and a central portion is higher than portions on bothsides of the central portion, as shown in FIG. 2C. The bump 3 is incontact with the film substrate 1 on both the sides of the wiring layer2. The cross sectional shape of the bump 3 taken in the longitudinaldirection of the wiring layer 2 is substantially rectangular, as shownin FIG. 2B.

By forming the bump 3 in the above-described shape, the bump 3 can beheld on the wiring layer 2 with strength sufficient for practical use.That is, since the bump 3 is joined not only to the upper surface butalso to both the side surfaces of the wiring layer 2, the bump 3exhibits sufficient stability against the force applied in the lateraldirection.

Moreover, since the bump 3 has an upper surface with the protrudingcentral portion instead of the flat upper surface, the bump 3 issuitable for connection to an electrode pad of a semiconductor chip.First, even if there is a displacement in positioning between the bump 3and the electrode pad, the bump 3 is less prone to be in contact with anincorrect electrode pad adjacent to the electrode pad to which the bumpactually is to be connected, as compared with the case where the bump 3has a flat upper surface. Second, when connecting the bump 3 to theelectrode pad, an oxide film formed on the electrode pad can be brokeneasily with the upper surface of the bump 3 having the protrudingcentral portion, thereby achieving favorable electrical connection to aninner portion of the electrode pad that is not oxidized. Thirdly, whenconnecting the bump 3 to the electrode pad in the state where a resinlayer intervenes between the semiconductor chip and the tape carriersubstrate, the resin layer can be displaced easily with the head of thebump 3.

It is not necessary to form the bump 3 so as to be in contact with thefilm substrate 1 on both the sides of the wiring layer 2 in order toobtain the above-described effects. However, the bump 3 with such aconfiguration can be held on the wiring layer 2 most stably against theforce applied in the lateral direction. Also, it is not necessary thatthe cross sectional shape of the bump 3 taken in the longitudinaldirection of the wiring layer 2 is substantially rectangular. However,according to such a configuration, the bump 3 is connected to theelectrode pad of the semiconductor chip most favorably and besides, thebump 3 can be produced easily.

As shown in FIG. 2C, the thickness of the bump 3 as measured from theupper surface of the wiring layer 2 is greater than the thickness of thebump 3 as measured from each side surface of the wiring layer 2 in thetransverse direction. Although forming the bump 3 in this shape is notnecessary, such a configuration is effective in suppressing theoccurrence of a short circuit between the wiring layer 2 and thesemiconductor chip due to curling or the like of the tape carriersubstrate and also in avoiding the occurrence of a short circuit with abump 3 formed on a wiring layer 2 adjacent thereto. The bump 3 can beformed into this shape by the method including a plating process asdescribed later.

As a material of the film substrate 1, polyimide, which is a generallyused material, can be used. An insulating film made of PET, PEI, or thelike also may be used as the film substrate 1, depending on otherconditions. Generally, the wiring layers 2 are formed using copper so asto have a thickness in the range from 3 to 20 μm. If necessary, an epoxyadhesive may intervene between the film substrate 1 and the wiringlayers 2.

The thickness of the bumps 3 generally is in the range from 3 to 20 m.As a material of the bumps 3, copper can be used, for example. When thebumps 3 are formed using copper, it is preferable that the bumps 3 andthe wiring layers 2 are plated with a metal. For example, the bumps 3and the wiring layers 2 may be plated with nickel to form a nickel innerlayer and then plated with gold to form a gold outer layer.Alternatively, the bumps 3 and the wiring layers 2 may be plated withtin, (nickel+palladium), only nickel, or only gold. When the bumps 3 andthe wiring layers 2 are plated with a metal, no plated metal layer isprovided between the bumps 3 and the wiring layers 2. On the other hand,when the bumps 3 are not plated with a metal, gold or nickel is used asa material of the bumps 3 and a plated nickel layer is provided betweenthe bumps 3 and the wiring layers 2.

EMBODIMENT 2

A method for manufacturing a tape carrier substrate according toEmbodiment 2 of the present invention will be described with referenceto FIGS. 3A1 to 3F1 and FIGS. 3A2 to 3F2. FIGS. 3A1 to 3F1 illustrate aseries of major processes of forming bumps on a tape carrier substrate,and each shows a plan view of a region for mounting a semiconductor chipon a film substrate. FIGS. 3A2 to 3F2 are enlarged cross-sectional viewsof FIGS. 3A1 to 3F1, respectively. Each of the cross-sectional views istaken along the line B-B in FIG. 3A1.

First, a film substrate 1 on which a plurality of wiring layers 2 arearranged in order as shown in FIG. 3A1 is provided. On an entire surfaceof the film substrate 1, a photoresist 4 is formed as shown in FIG. 3B1.Next, as shown in FIG. 3C1, an exposure mask 5 for forming bumps isplaced above the photoresist 4 so as to oppose the photoresist 4. Alight-transmitting region 5 a of the exposure mask 5 has a continuousslit shape that extends across the plurality of wiring layers 2 in thedirection along which the wiring layers 2 are arranged in order.

By exposing the photoresist 4 through the light-transmitting region 5 aof the exposure mask 5 and then developing the photoresist 4, an openingas a slit-shaped pattern 4 a extending across the plurality of wiringlayers 2 is formed on the photoresist 4. As a result, the wiring layers2 are partially exposed in the slit-shaped pattern 4 a. Next, a metal isplated on the exposed portions of the wiring layers 2 through theslit-shaped pattern 4 a to form bumps 3 as shown in FIG. 3E1. Then, byremoving the photoresist 4, the tape carrier substrate 6 provided withthe wiring layers 2 on which the bumps 3 are formed is obtained, asshown in FIG. 3F1.

As described above, by plating the metal on the exposed portions of thewiring layers 2 through the slit-shaped patterns 4 a, the bumps 3 havingthe shape as shown in FIGS. 2A to 2C can be formed easily. In theprocess shown in FIG. 3E1, not only upper surfaces but also sidesurfaces of the wiring layers 2 are exposed and the exposed surfaces ofthe wiring layers 2 entirely are plated with a metal. This enables easyformation of the bumps 3.

It is not necessary that the slit-shaped pattern 4 a of the photoresist4 is formed so as to be a continuous pattern extending across theplurality of wiring layers 2 as shown in FIG. 3D1. That is, a pattern inwhich discrete openings respectively corresponding to the plurality ofwiring layers 2 are formed may be used, as long as each of the openingsincludes at least predetermined regions on both sides of thecorresponding wiring layer 2. However, the continuous slit-shapedpattern extending across the plurality of wiring layers 2 can be formedeasily because the light-transmitting region 5 a of the exposure mask 5may have a continuous slit shape as shown in FIG. 3C1. As long as theslit-shaped pattern 4 a extends over regions on both sides of therespective wiring layers 2, no problem occurs if the longitudinaldirection of the slit-shaped pattern 4 a makes some angle to the wiringlayers 2. However, it is most reasonable that the longitudinal directionof the slit-shaped pattern 4 a is orthogonal to the longitudinaldirection of the wiring layers 2.

Moreover, the accuracy of the positioning of the bumps 3 relative to thewiring layers. 2 can be ensured easily by forming the slit-shapedpattern 4 a on the photoresist 4 and then plating a metal on the wiringlayers 2. The reason for this is as follows. When the displacement ofthe slit-shaped pattern 4 a relative to the wiring layers 2 is within anallowable range, each of the wiring layers 2 has intersection with theslit-shaped pattern 4 a so as to be exposed therefrom. The metal coatingformed by plating grows on the upper surface and side surfaces of eachwiring layer 2. Thus, even if there is a displacement of the slit-shapedpattern 4 a, the bumps 3 are formed into a constant shape and size,thereby allowing the bumps 3 satisfying the predetermined conditions tobe obtained. Therefore, the position adjustment of the exposure mask 5can be carried out easily because the strict positioning accuracy of theexposure mask 5 is not required.

In the case where the bumps 3 are formed using copper, the metal platingcan be carried out as an electroplating using copper sulfate as aplating solution by applying a current of 0.3 to 5 A/dm². Theelectroplating is suitable for forming the bumps 3 so as to have a crosssectional shape as shown in FIG. 2C and a sufficient thickness.

Hereinafter, solution to various problems occurring due to thedisplacement of the exposure mask 5 in the method according to thepresent embodiment will be described. First, a positional relationshipbetween electrode pads of a semiconductor chip and the wiring layers 2of the tape carrier substrate 6 will be described with reference to FIG.4 to FIG. 6.

FIG. 4 is a plan view showing an example of a semiconductor chip. FIG. 4shows the arrangement of electrode pads formed on a surface of thesemiconductor chip 7. The electrode pads arranged along the longer sidedirection of the semiconductor chip 7 bear reference numeral 8 a, whilethe electrode pads arranged along the shorter side direction of thesemiconductor chip 7 bear reference numeral 8 b. There are moreelectrode pads 8 a than the electrode pads 8 b, and these electrode pads8 a are arranged more densely than the electrode pads 8 b. C1 indicatesthe center of the semiconductor chip 7 (hereinafter referred to as“semiconductor chip center”). D is a distance between an inner edge lineof the electrode pads and the semiconductor chip center C1. S1 is adistance between an inner edge line of the electrode pads 8 a and anouter side edge of the electrode pad 8 b arranged closest to theelectrode pads 8 a. L1 is a length of the electrode pads 8 a, and W1 isa width of the electrode pads 8 a.

FIG. 5 is a plan view showing a part of a film substrate 1 on whichwiring layers 2 are formed, which is used for manufacturing the tapecarrier substrate. C2 indicates the center of a region for mounting thesemiconductor chip 7 (hereinafter referred to as “semiconductorchip-mounting-region center”). d is a distance between an inner edgeline of the wiring layers 2 arranged along the longer side of the filmsubstrate 1 and the semiconductor chip-mounting-region center C2.

FIG. 6 is a plan view showing a part of a region for mounting asemiconductor chip in the tape carrier substrate 6 provided with thewiring layers 2 on which the bumps 3 are formed according to the methodaccording to the present embodiment. FIG. 6 shows the bumps 3 obtainedin the state where there is no displacement of the exposure mask 5 inFIG. 3C1 relative to the wiring layers 2. L2 is a length of the bumps 3,and W2 is a width of the bumps 3.

Considering a displacement of the exposure mask 5 in the longitudinaldirection of the wiring layers 2, it is preferable that the distance dbetween the semiconductor chip-mounting-region center C2 and the wiringlayers 2 is shorter than the distance D between the semiconductor chipcenter C1 and the electrode pads 8 a. Also, it is preferable that thelength L2 of the bumps 3 is longer than the length L1 of the electrodepads 8 a. According to this configuration, even if the displacement ofthe exposure mask 5 results in the displacement of the formed bumps 3 inthe longitudinal direction of the wiring layers 2, the portion whereeach of the bumps 3 opposes the corresponding electrode pad 8 a stillcan have a sufficient area.

Similarly to FIG. 6, FIG. 7 is a plan view showing a part of a regionfor mounting a semiconductor chip in the tape carrier substrate 6provided with the wiring layers 2 on which the bumps 3 are formedaccording to the method according to the present embodiment. FIG. 7shows the bumps 3 obtained in the state where the exposure mask 5 inFIG. 3C1 is displaced relative to the wiring layers 2 in the short-sidedirection of the film substrate 1. S2 is a space between an inner edgeline of the bumps 3 formed on the wiring layers 2 arranged along thelonger side direction of the film substrate 1 and an outer side edge ofthe bump 3 on the wiring layer 2 that is arranged along the shorter sideof the film substrate 1 and closest to the longer side of the filmsubstrate 1.

In the state shown in FIG. 7, although the bumps 3 satisfy all thedesigned sizes, the space S2 differs in size from the space S1 shown inFIG. 4 owing to the displacement of the exposure mask 5 relative to thewiring layers 2. That is, when the exposure mask 5 is displaced in theshort-side direction of the film substrate 1, the positions of the bumps3 move in the longitudinal direction of the wiring layers 2 on thewiring layers 2 arranged along the longer side of the film substrate 1,whereas the positions of the bumps 3 do not move on the wiring layers 2arranged along the shorter side of the film substrate 1. Solution tothis problem is shown in FIGS. 8 and 9.

FIG. 8 shows an exposure mask 9 having a different mask pattern from theexposure mask 5 used in the process shown in FIG. 3C1. In this exposuremask 9, light-transmitting regions 9 a provided in portionscorresponding to the portions along the longer sides of a film substrateare formed as continuous openings, while light-transmitting regions 9 bprovided in portions corresponding to the portions along the shortersides of a film substrate are formed as discrete openings. When usingthis exposure mask 9, a film substrate 1 having wiring layers 10 a and10 b formed as shown in FIG. 9 is used. In this film substrate 1, thewiring layers 10 b arranged along the shorter side are wider than thewiring layers 10 a arranged along the longer side.

By forming opening patterns on a photoresist using the above-describedexposure mask 9 and then plating a metal on the wiring layers 10 a and10 b through the opening patterns, the bumps 3 with the designed sizecan be obtained and the space S2 shown in FIG. 7 can be made equal insize to the space S1 shown in FIG. 4. That is, when the exposure mask 9shown in FIG. 8 is displaced in the short-side direction of the filmsubstrate 1, then, on the wiring layers 10 b arranged along the shorterside of the film substrate 1, the light-transmitting regions 9 b of theexposure mask 9 move in the width direction so that the positions of theformed bumps 3 move as shown in FIG. 9. However, since the wiring layers10 b are wide, the bumps 3 having the predetermined size can be formedas long as the amount of the movement is within an allowable range. Theamount in which the positions of the formed bumps 3 move on the wiringlayers 10 b is equal to the amount in which the positions of the bumps 3move in the longitudinal direction of the wiring layers 10 a on thewiring layers 10 a arranged along the longer side of the film substrate1. As a result, the space S2 can be made equal in size to the space S1.

FIGS. 10A and 10B show processes corresponding to those shown in FIG.3C1, which are carried out using an exposure mask 11 having antherconfiguration. The exposure mask 11 is configured so that alight-shielding region 11 a is formed at a portion corresponding to thelight-transmitting region 5 a of the exposure mask 5 shown in FIG. 3C1.This exposure mask 11 can be used when the photoresist 4 is a negativephotoresist. Other conditions for this exposure mask 11 are the same asthose for the exposure mask 5 shown in FIG. 3C.

EMBODIMENT 3

The configuration of a tape carrier substrate according to Embodiment 3and a method for manufacturing the same will be described with referenceto FIG. 11. In the present embodiment, each wiring layer 12 formed on afilm substrate 1 is formed so that a leading end portion 12 a isnarrower than a base portion 12 b. The reason for this is as follows.

During the formation of the bumps 3 by the electroplating as shown inFIG. 3E1, a copper layer formed by the electroplating also grows in thewidth direction of each wiring layer 2. Thus, short circuits may occurbetween copper layers growing from adjacent wiring layers 2 in the widthdirection. However, the attempt to expand the space between the adjacentwiring layers 2 to avoid the occurrence of such short circuits resultsin the decrease in the packaging density of the wiring layers 2, whichrenders the downsizing of a semiconductor device difficult.

On this account, by forming the leading end portion 12 a of each of thewiring layers 2 so as to be narrower than the base portion 12 b with thebumps 3 formed on the narrow leading end portions as in the presentembodiment, it becomes possible to reduce the risk that short circuitsmight occur between copper layers growing from adjacent wiring layers 12in the width direction.

EMBODIMENT 4

A semiconductor device according to Embodiment 4 and a method formanufacturing the same will be described with reference to FIG. 12. In atape carrier substrate 6, bumps 3 are formed on a plurality of wiringlayers 2 arranged on a film substrate 1, and the bumps 3 have a shape asshown in FIGS. 2A to 2C, as in the above-described embodiments. That is,each of the bumps 3 is provided across the corresponding wiring layer 2so as to extend over regions on both sides of the wiring layer 2, andthe cross sectional shape of the bump 3 taken in the width direction ofthe wiring layer 2 is such that the bump 3 is joined to an upper surfaceand both side surfaces of the wiring layer 2. Furthermore, the crosssectional shape of the bump 3 taken in the width direction of the wiringlayer 2 is such that a central portion is higher than portions on bothsides of the central portion. In a semiconductor chip 21 mounted on thetape carrier substrate 6, electrode pads 27 of the semiconductor chip 21are connected to the bumps 3, and the space between the tape carriersubstrate 6 and the semiconductor chip 21 are filled with anencapsulation resin 22.

A semiconductor device of the present embodiment is manufactured byplacing the semiconductor chip 21 on the tape carrier substrate 6manufactured by the method according to the above-described embodimentsand then pressing the semiconductor chip 21 with a bonding tool 13.Preferably, ultrasonic energy is applied to the semiconductor chip 21via the bonding tool 13. This allow a head having a protruding centralportion of each bump 3 to vibrate in the state where the head is incontact with an oxide film on a surface of the corresponding electrodepad 27, thereby enhancing the effect of breaking the oxide film.

Also, it is possible to mount the tape carrier substrate 6 on thesemiconductor chip 21 by the method shown in FIGS. 13A and 13B. Morespecifically, a region of the tape carrier substrate 6 where the bumps 3are formed is provided with an encapsulation resin 14, as shown in FIG.13A. Subsequently, the semiconductor chip 21 is placed so as to opposethe tape carrier substrate 6 and then, the semiconductor chip 21 and thetape carrier substrate 6 are pressed against each other so that thebumps 3 are in contact with the electrode pads 27, respectively, asshown in FIG. 13B. During the process shown in FIG. 13B, the uppersurfaces with a protruding central portion of the bumps 3 effectivelydisplace the encapsulation resin 14 to both sides, thereby allowing thebumps 3 to be brought into contact with the electrode pads 27 easily.

The invention may be embodied in other forms without departing from thespirit or essential characteristics thereof The embodiments disclosed inthis application are to-be considered in all respects as illustrativeand not limiting. The scope of the invention is indicated by theappended claims rather than by the foregoing description, and allchanges which come within the meaning and range of equivalency of theclaims are intended to be embraced therein.

1-20. (canceled)
 21. A semiconductor device comprising: a circuit boardhaving an insulating substrate, a plurality of wiring layers arranged onthe insulating substrate, and bumps formed on the wiring layersrespectively, the bump being provided across a longitudinal direction ofa corresponding one of the wiring layers so as to extend over regions onboth sides of the wiring layer and contact a surface of the insulatingsubstrate, with a cross sectional shape of the bump taken in a widthdirection of the wiring layer being such that a central portion ishigher than both side portions and an upper surface has a rounded shape;and a semiconductor chip mounted on the circuit board, wherein electrodepads of the semiconductor chip are connected to the wiring layers viathe bumps.
 22. The semiconductor device according to claim 21, whereinan oxide film is formed on a surface of each of the electrode pads ofthe semiconductor chip, and the bump is connected to the electrode padthrough a broken area of the oxide film.
 23. The semiconductor deviceaccording to claim 21, wherein a cross sectional shape of the bump takenin a longitudinal direction of the wiring layer is substantiallyrectangular.
 24. The semiconductor device according to claim 21, whereinthe wiring layers and the bumps are plated with a metal that isdifferent from materials of the wiring layers and the bumps.
 25. Thesemiconductor device according to claim 21, wherein the bump extendsacross the wiring layer in a direction perpendicular to the longitudinaldirection of the wiring layer.
 26. The semiconductor device according toclaim 21, wherein each of the wiring layers has a narrow region, and thebump is formed in the narrow region.
 27. The semiconductor deviceaccording to claim 21 wherein at least a part of the central portion ofthe upper surface of the bump is flat.
 28. The semiconductor deviceaccording to claim 27, wherein an oxide film is formed on a surface ofeach of the electrode pads of the semiconductor chip, and the bump isconnected to the electrode pad through a broken area of the oxide film.29. The semiconductor device according to claim 27, wherein a crosssectional shape of the bump taken in a longitudinal direction of thewiring layer is substantially rectangular.
 30. The semiconductor deviceaccording to claim 27, wherein the wiring layers and the bumps areplated with a metal that is different from materials of the wiringlayers and the bumps.
 31. The semiconductor device according to claim27, wherein the bump extends across the wiring layer in a directionperpendicular to the longitudinal direction of the wiring layer.
 32. Thesemiconductor device according to claim 27, wherein each of the wiringlayers has a narrow region, and the bump is formed in the narrow region.33. The semiconductor device according to claim 21, wherein no steppedportion is formed between an upper surface and a side edge of the wiringlayer.
 34. The semiconductor device according to claim 27, wherein nostepped portion is formed between an upper surface and a side edge ofthe wiring layer.
 35. A semiconductor device comprising: a circuit boardhaving an insulating substrate, a plurality of wiring layers arranged onthe insulating substrate, and bumps formed on the wiring layersrespectively, the bump being provided across a longitudinal direction ofa corresponding one of the wiring layers so as to extend over regions onboth sides of the wiring layer and contact a surface of the insulatingsubstrate, with a cross sectional shape of the bump taken in a widthdirection of the wiring layer being such that a thickness of the bumpfrom the upper surface of the wiring layer is larger than a thickness ofthe bump from the side face of the wiring layer; and a semiconductorchip mounted on the circuit board, wherein electrode pads of thesemiconductor chip are connected to the wiring layers via the bumps. 36.A semiconductor device comprising: a circuit board having an insulatingsubstrate, a plurality of wiring layers arranged on the insulatingsubstrate, and bumps formed on the wiring layers respectively, an uppersurface of the wiring layer being flat, and the bump being providedacross a longitudinal direction of a corresponding on of the wiringlayers so as to extend over regions on both sides of the wiring layerand contact a surface of the insulating substrate, with a crosssectional shape of the bump taken in a width direction of the wiringlayer being such that a central portion is higher than both sideportions; and a semiconductor chip mounted on the circuit board, whereinelectrode pads of the semiconductor chip are connected to the wiringlayers via the bumps.